Channel Thickness-Dependent Degradation of Field-Effect Mobility in Multilayer MoS2 Transistors
- Journal
- ACS Applied Electronic Materials
- Vol
- 6 (1)
- Page
- 465-471
- Year
- 2023
- Link
- https://doi.org/10.1021/acsaelm.3c01461 1116회 연결
Materials Imaging & Integration